Charge Configuration Memory Devices: Energy Efficiency and Switching Speed

Year: 2022

Authors: Mraz A.; Venturini R.; Svetin D.; Sever V.; Mihailovic I.A.; Vaskivskyi I.; Ambrozic B.; Drazic G.; D’Antuono M.; Stornaiuolo D.; Tafuri F.; Kazazis D.; Ravnik J.; Ekinci Y.; Mihailovic D.

Autors Affiliation: Complex Matter Department F7, Jozef Stefan Institute, Jamova cesta 39, Ljubljana, 1000, Complex Matter Department F7, Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia, , Slovenia; CENN Nanocenter, Jamova cesta 39, Ljubljana, 1000, CENN Nanocenter, Jamova cesta 39, 1000 Ljubljana, Slovenia, , Slovenia; Faculty of Mathematics and Physics, University of Ljubljana, Jadranska cesta 19, Ljubljana, 1000, Faculty of Mathematics and Physics, University of Ljubljana, Jadranska cesta 19, 1000 Ljubljana, Slovenia, , Slovenia; Faculty of Electrical Engineering, University of Ljubljana, Tr?a?ka cesta 25, Ljubljana, 1000, Faculty of Electrical Engineering, University of Ljubljana, Tr?a?ka cesta 25, 1000 Ljubljana, Slovenia, , Slovenia; Paul Scherrer Institute, PSI, Forschungsstrasse 111, Villigen, 5232, Paul Scherrer Institute, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland, , Switzerland; Dipartimento di Fisica “”ettore Pancini””, Universita di Napoli Federico II, Monte S. Angelo Via Cinthia, Napoli, 80126, Dipartimento di Fisica “”Ettore Pancini””, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli, Italy, , Italy; CNR-SPIN, Complesso Monte sant?Angelo, Via Cinthia, Napoli, 80126, CNR-SPIN Complesso Monte Sant?Angelo, Via Cinthia, 80126 Napoli, Italy, , Italy; CNR-Istituto Nazionale di Ottica (CNR-INO), Largo Enrico Fermi 6, Florence, 50125, CNR-Istituto Nazionale di Ottica (CNR-INO), Largo Enrico Fermi 6, 50125 Florence, Italy, , Italy; Jozef Stefan International Postgraduate School, Jamova cesta 39, Ljubljana, 1000, Jozef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Slovenia, , Slovenia; Department of Materials Chemistry, National Institute of Chemistry, Hajdrihova 19, Ljubljana, 1000, Department of Materials Chemistry, National Institute of Chemistry, Hajdrihova 19, 1000 Ljubljana, Slovenia, , Slovenia

Abstract: Current trends in data processing have given impetus for an intense search of new concepts of memory devices with emphasis on efficiency, speed, and scalability. A promising new approach to memory storage is based on resistance switching between charge-ordered domain states in the layered dichalcogenide 1T-TaS2. Here we investigate the energy efficiency scaling of such charge configuration memory (CCM) devices as a function of device size and data write time ?W as well as other parameters that have bearing on efficient device operation. We find that switching energy efficiency scales approximately linearly with both quantities over multiple decades, departing from linearity only when ?W approaches the 0.5 ps intrinsic switching limit. Compared to current state of the art memory devices, CCM devices are found to be much faster and significantly more energy efficient, demonstrated here with two-terminal switching using 2.2 fJ, 16 ps electrical pulses.

Journal/Review: NANO LETTERS

Volume: 22 (12)      Pages from: 4814  to: 4821

More Information: This project has received funding from the EU-H2020 research and innovation program under Grant Agreement 654360, NFFA-Europe, having benefited from the access provided by Paul Scherrer Institute in Villigen, Switzerland within the framework of the NFFA-Europe Transnational Access Activity. We acknowledge the help of L. Cindro from F9 at JSI on contact bonding. We thank the support from the Slovenian Research Agency (Grant P1-0040; Grant PR-08972 to A.M., Grant PR-10496 to R.V., Grant PR-06158 to A.K., Grant PR-07589 to J.R., Grant I0-0005 to D.S., Grant J2-3041 to G.D.), Slovene Ministry of Education, Science and Sport (Grant C3330-19-952005, Raziskovalci-2.1-IJS-952005), ERC AdG (Grant GA320602, TRAJECTORY), and ERC PoC (Grant GA767176, Umem4QC). We thank the CENN Nanocenter for the use of AFM, FIB, and DaLI. This project has received funding from the European Union´s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie Grant Agreement No 701647, PSI-FELLOW-II-3i. F.T. has been supported by the Project SQUAD-Programma STAR PLUS 2020.
KeyWords: charge configuration memory; TaS2; ultrafast; energy-efficient; cryogenic; nonvolatile

DOI: 10.1021/acs.nanolett.2c01116

Citations: 7
data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-04-07
References taken from IsiWeb of Knowledge: (subscribers only)
Connecting to view paper tab on IsiWeb: Click here
Connecting to view citations from IsiWeb: Click here