Silicon carbide for future intense luminosity nuclear physics investigations

Year: 2019

Authors: Tudisco S.; Altana C.; Boscardin M.; Calcagno L.; Ciampi C.; Cirrone G. A. P.; Fazzi A.; Giove D.; Gorini G.; Labate L.; La Via F.; Lanzalone G.; Litrico G.; Muoio A.; Pasquali G.; Puglia S. M. R.; Rebai M.; Ronchin S.; Santangelo A.; Scuderi V.; Trifiro A.; Zimbone M.

Autors Affiliation: INFN, LNS, Catania, Italy;‎ Fdn Bruno Kessler FBK Trento, TIFPA, INFN, Natl Inst Nucl Phys, Trento, Italy; INFN, Sez Catania, Catania, Italy;‎ Univ Catania, Dept Phys & Astron, Catania, Italy; Nazl Fis Nucl INFN, Sez Firenze, Sesto Fiorentino, Italy; Univ Firenze, Dipartimento Fis, Sesto Fiorentino, Italy; Politecn Milan, INFN, Dept Energy, Sez Milano, Milan, Italy; Univ Milano Bicocca, Dept Phys, Sez Milano Bicocca, INFN, Milan, Italy; CNR, INO, Pisa, Italy;‎ CNR, Natl Res Council, IMM, Catania, Italy; Univ Enna Kore, Dept Engn & Architecture, Enna, Italy; Epitaxial Technol Ctr LPE, Catania, Italy;‎ STMicroelectronics, Str Primosole, Catania, Italy; Univ Messina, Dipartimento Sci MIFT, Messina, Italy

Abstract: Silicon carbide (SiC) is one of the compound semiconductor which has been considered as a potential alternative to Silicon for the fabrication of radiation hard particles detectors. Material, detectors implementation and possible application in the future INFN projects has been discussed.


Volume: 42 (2-3)      Pages from: 74-1  to: 74-4

DOI: 10.1393/ncc/i2019-19074-1

Citations: 9
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